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CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT NPN/PNP Silicon AF Transistor Array
VOLTAGE 50 Volts
APPLICATION
* AF input stages and driver applicationon equipment. * Other switching applications.
CH817UPNPT
CURRENT 0.5 Ampere
FEATURE
* Small surface mounting type. (SC-74/SOT-457) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Two internal isolated NPN/PNP transistor in one package.
(1) (6) 0.95 0.95 (3) (4) 0.25~0.5 1.4~1.8
SC-74/SOT-457
1.7~2.1
2.7~3.1
CONSTRUCTION
* NPN/PNP transistor in one package.
0.08~0.2 0.3~0.6
C1 B2 5 E2 4
0.935~1.3 0~0.15 2.6~3.0
CIRCUIT
6
TR2 TR1
1 E1
2 B1
3 C2
Dimensions in millimeters
SC-74/SOT-457
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board.
2002-7
PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature
CONDITIONS open emitter open base open collector - - - - - - Tamb 25 C; note 1 -
MIN.
MAX. 45 50 5 500 1000 200 330 +150 150 +150 V V V
UNIT
mA mA mA mW C C C
-65 - -65
RATING CHARACTERISTIC CURVES ( CH817UPNPT )
THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO IEBO hFE VCEsat VBEsat Cc Ce fT F Note 1. Pulse test: tp 300 s; 0.02. PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage collector capacitance emitter capacitance transition frequency noise figure CONDITIONS IE = 0; VCB = 25 V IC = 0; VCB = 25 V; TA = 150 OC IC = 0; VEB = 4 V IC = 100 mA; VCE = 1.0V; note 1 IC = 300 mA; VCE = 1.0V IC = 500 mA; IB = 50 mA IC = 500 mA; IB = 50 mA IE = ie = 0; VCB = 10V ; f = 1 MHz IC = ic = 0; VBE = 500 mV; f = 1 MHz IC = 50 mA; VCE = 5 V ; f = 100 MHz IC = 100 A; VCE = 5 V; RS = 1 k; f = 1.0 kHz - - - 160 100 - - - - 170 - MIN. MAX. 100 50 100 400 - 700 1.2 6 60 - 4 mV V pF pF MHz dB UNIT nA uA nA PARAMETER thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 105 UNIT K/W
RATING CHARACTERISTIC CURVES ( CH817UPNPT )
Total power dissipation Ptot = f (TS ) Collector cutoff current ICBO = f (TA) VCB = 25V
400
mW
5
10
V CBO
nA 10
4
300
P tot
250
10
200
3
max
150
10
2
typ
100
10
50
1
0 0
20
40
60
80
100
120 OC
150
10 0
0
50
100
oC
150
TS
TA
Permissible Pulse Load R thJS = f (t p )
Permissible Pulse Load
Ptotmax / PtotDC = f (t p )
10 3
K/W
10 3
Ptotmax / PtotDC
10 2
10 2
10 1
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
R thJS
10
0
D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
RATING CHARACTERISTIC CURVES ( CH817UPNPT )
Collector-emitter saturation voltage IC = f (VCEsat ), h FE = 10
10 3
Base-emitter saturation voltage IC = f (VBEsat ), h FE = 10
10 3
C
mA 150 oC 25 oC -50 oC
C
mA 150 oC 25 oC -50 oC
10 2 5
10 2 5
10 1 5
10 1 5
10 0 5
10 0 5
10 -1
0
0.2
0.4
0.6
V
0.8
10 -1
0
1.0
2.0
3.0
V
4.0
VCEsat
V BEsat
DC current gain hFE = f (IC ) VCE = 5V
10 3 h FE 5 100 oC 25 oC -50 oC 10 5
2
Transition frequency fT = f (IC) VCE = 5V
10 3 fT MHz 5
10 2
10 1 5
5
10 0 10 -1
10 0
10 1
10 2
mA 10 3
10 1 10 0
10 1
3
10 2
mA
10
C
C

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